FDB2670
MOSFET N-CH 200V 19A TO263ABManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDB2670 is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power switching applications. This component offers a 200V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 19A at 25°C ambient temperature. The device features a low on-resistance of 130mOhm maximum at 10A and 10V gate-source voltage (Vgs), facilitating minimal conduction losses. With a maximum power dissipation of 93W at 25°C case temperature and a thermal resistance optimized for TO-263 (D2PAK) surface mount packaging, the FDB2670 is suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 38 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1320 pF maximum at 100V Vds. The operating temperature range is -65°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and industrial power conversion systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 100 V |
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