FDB2570
MOSFET N-CH 150V 22A TO263ABManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FDB2570 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 22A at 25°C (Ta), with a maximum power dissipation of 93W (Tc). Featuring low on-resistance of 80mOhm (Max) at 11A and 10V (Vgs), it is optimized for efficient power switching. The Gate Charge (Qg) is 56 nC (Max) at 10V, and Input Capacitance (Ciss) is 1911 pF (Max) at 75V (Vds). The FDB2570 is housed in a TO-263-3, D2PAK (TO-263AB) surface mount package, suitable for high-density board designs. Its operating temperature range is -65°C to 175°C (TJ). This MOSFET is widely utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1911 pF @ 75 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
