FDB20AN06A0
MOSFET N-CH 60V 9A/45A TO263ABManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDB20AN06A0 is a N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and offers a continuous drain current of 9A at 25°C ambient temperature and 45A at 25°C case temperature. The maximum power dissipation is rated at 90W (Tc). With a low on-resistance of 20mOhm at 45A and 10V, the FDB20AN06A0 minimizes conduction losses. The device utilizes optimized PowerTrench® process technology for reduced gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 950 pF at 25V, facilitating faster switching speeds. It is housed in a TO-263AB (D2PAK) surface mount package, suitable for demanding thermal management. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial automation, power supplies, and automotive electronics.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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