FDAF75N28
MOSFET N-CH 280V 46A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UniFET™ N-Channel MOSFET, part number FDAF75N28, offers a 280V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 46A at 25°C (Tc). This device features a low on-resistance of 41mOhm maximum at 23A and 10V (Vgs), with a maximum power dissipation of 215W (Tc). The gate charge (Qg) is 144 nC maximum at 10V (Vgs) and input capacitance (Ciss) is 6700 pF maximum at 25V (Vds). Designed with N-Channel Metal Oxide technology, it operates within a temperature range of -55°C to 150°C (TJ) and withstands a gate-source voltage (Vgs) up to ±30V. The FDAF75N28 is housed in a TO-3PF package suitable for through-hole mounting. This component is utilized in power control applications across various industrial sectors.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 280 V |
| Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V |
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