FDAF69N25
MOSFET N-CH 250V 34A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UniFET™ N-Channel Power MOSFET, part number FDAF69N25. This TO-3PF packaged device offers a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain current (Id) of 34A at 25°C. Featuring a low Rds(on) of 41mOhm maximum at 17A and 10V Vgs, this MOSFET is designed for efficient power switching applications. Key parameters include a Gate Charge (Qg) of 100nC maximum at 10V and an Input Capacitance (Ciss) of 4640pF maximum at 25V. With a maximum power dissipation of 115W at 25°C (Tc), it is suitable for use in power supplies, motor control, and industrial applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4640 pF @ 25 V |
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