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FDA20N50

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FDA20N50

MOSFET N-CH 500V 22A TO3PN

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDA20N50 is an N-Channel UniFET™ MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 22A at 25°C (Tc). The TO-3PN package houses a robust MOSFET technology with a maximum on-resistance (Rds On) of 230mOhm at 11A and 10V. Key parameters include a gate charge (Qg) of 59.5 nC at 10V and an input capacitance (Ciss) of 3120 pF at 25V. The threshold voltage (Vgs(th)) is a maximum of 5V at 250µA. This component is utilized in power supply units, lighting, and motor control applications.

Additional Information

Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 11A, 10V
FET Feature-
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-3PN
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 25 V

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