FDA20N50
MOSFET N-CH 500V 22A TO3PNManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDA20N50 is an N-Channel UniFET™ MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 22A at 25°C (Tc). The TO-3PN package houses a robust MOSFET technology with a maximum on-resistance (Rds On) of 230mOhm at 11A and 10V. Key parameters include a gate charge (Qg) of 59.5 nC at 10V and an input capacitance (Ciss) of 3120 pF at 25V. The threshold voltage (Vgs(th)) is a maximum of 5V at 250µA. This component is utilized in power supply units, lighting, and motor control applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 11A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 59.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V |
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