FDA16N50
MOSFET N-CH 500V 16.5A TO3PNManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UniFET™ N-Channel Power MOSFET, part number FDA16N50, offers a 500V drain-source voltage and a continuous drain current of 16.5A at 25°C (Tc). This through-hole component features a low Rds(on) of 380mOhm at 8.3A and 10V, with a maximum gate charge of 45 nC at 10V. The device boasts a maximum power dissipation of 205W (Tc) and an operating temperature range of -55°C to 150°C. Packaged in a TO-3PN (TO-3P-3, SC-65-3) case, the FDA16N50 is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1945 pF @ 25 V |
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