FDA15N65
MOSFET N-CH 650V 16A TO3PNManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FDA15N65 is a UniFET™ series N-Channel Power MOSFET featuring a 650V drain-to-source voltage (Vdss) and 16A continuous drain current (Id) at 25°C. This device offers a maximum on-resistance (Rds On) of 440mOhm at 8A and 10V Vgs. With a 260W power dissipation, it is suitable for applications requiring high voltage and current handling. The TO-3PN package facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 3095 pF at 25V. This MOSFET is utilized in power supply units, lighting, and motor control applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 260W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3095 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD18N20LZ
MOSFET N-CH 200V 16A DPAK
FDB28N30TM
MOSFET N-CH 300V 28A D2PAK
FDPF51N25
MOSFET N-CH 250V 51A TO220F
