FCI11N60
MOSFET N-CH 600V 11A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FCI11N60 is a high-performance N-Channel SuperFET™ MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 11 A at 25°C (Tc), with a maximum power dissipation of 125 W (Tc). The FCI11N60 offers a low on-resistance of 380 mOhm at 5.5 A and 10 V, supported by a gate charge of 52 nC (max) at 10 V. Its input capacitance (Ciss) is rated at 1490 pF (max) at 25 V. The component utilizes Metal Oxide technology and is housed in a TO-262 (I2PAK) package, suitable for through-hole mounting. This MOSFET is commonly found in power supply units, lighting, and power factor correction circuits. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 25 V |
Request a Quote
Clients Also Buy
FCD5N60TM
MOSFET N-CH 600V 4.6A DPAK
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK
FCD5N60TM-WS
MOSFET N-CH 600V 4.6A DPAK
