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FCH20N60

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FCH20N60

MOSFET N-CH 600V 20A TO247-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FCH20N60 is a SuperFET™ N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 20A at 25°C. The device offers a low on-resistance (Rds On) of 190mOhm at 10A and 10V drive voltage, contributing to minimized conduction losses. Key parameters include a maximum Gate Charge (Qg) of 98 nC at 10V and an input capacitance (Ciss) of 3080 pF at 25V. With a maximum power dissipation of 208W at 25°C, the FCH20N60 is housed in a standard TO-247-3 package for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and lighting systems.

Additional Information

Series: SuperFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)208W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3080 pF @ 25 V

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