FCH20N60
MOSFET N-CH 600V 20A TO247-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FCH20N60 is a SuperFET™ N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 20A at 25°C. The device offers a low on-resistance (Rds On) of 190mOhm at 10A and 10V drive voltage, contributing to minimized conduction losses. Key parameters include a maximum Gate Charge (Qg) of 98 nC at 10V and an input capacitance (Ciss) of 3080 pF at 25V. With a maximum power dissipation of 208W at 25°C, the FCH20N60 is housed in a standard TO-247-3 package for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and lighting systems.
Additional Information
Series: SuperFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080 pF @ 25 V |
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