SS9013GBU
TRANS NPN 20V 0.5A TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor SS9013GBU is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 20V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. The device offers a minimum DC current gain (hFE) of 112 at 50mA collector current and 1V collector-emitter voltage. With a maximum power dissipation of 625mW, the SS9013GBU is packaged in a TO-92-3 (TO-226-3) through-hole configuration, suitable for various electronic assemblies. Typical applications include power management, consumer electronics, and industrial control systems. The Vce(sat) is rated at a maximum of 600mV at 50mA base current and 500mA collector current. Collector cutoff current (ICBO) is a maximum of 100nA. The operating junction temperature for this device is 150°C. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 112 @ 50mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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