KSP14TA
TRANS NPN DARL 30V 0.5A TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor KSP14TA is a bipolar junction transistor (BJT) featuring an NPN Darlington configuration. This device offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 500mA. The KSP14TA exhibits a high DC current gain (hFE) of 20000 minimum at 100mA collector current and 5V collector-emitter voltage. Its transition frequency is rated at 125MHz. The transistor is housed in a TO-92-3 (TO-226AA) package with formed leads, suitable for through-hole mounting. Maximum power dissipation is 625mW, and the operating junction temperature can reach up to 150°C. This component is commonly utilized in general-purpose amplification and switching applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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