KSD471AGBU
TRANS NPN 30V 1A TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor KSD471AGBU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 1A. Its transition frequency is specified at 130MHz, with a minimum DC current gain (hFE) of 200 at 100mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA collector current and 100mA base current. The transistor dissipates a maximum of 800mW and operates at temperatures up to 150°C. The KSD471AGBU is supplied in a TO-92-3 package, suitable for through-hole mounting. This device finds application in consumer electronics, industrial controls, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
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