KSD1616LBU
TRANS NPN 50V 1A TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor KSD1616LBU is an NPN bipolar junction transistor (BJT) designed for robust performance in electronic circuits. This component features a maximum Collector-Emitter Breakdown Voltage (Vce(max)) of 50V and a continuous Collector Current (Ic) capability of up to 1A. It offers a minimum DC Current Gain (hFE) of 300 at 100mA and 2V, with a transition frequency (fT) of 160MHz. The saturation voltage (Vce(sat)) is specified at a maximum of 300mV when driven with 50mA base current and 1A collector current. With a maximum power dissipation of 750mW and an operating junction temperature of 150°C, the KSD1616LBU is suitable for applications found in consumer electronics and industrial control systems. The device is supplied in a TO-92-3 (TO-226AA) through-hole package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |
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