KSC10080BU
KSC1008OBU - NPN EPITACIAL SILICManufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor KSC10080BU is an NPN epitaxial silicon bipolar junction transistor. This component offers a collector-emitter breakdown voltage of 60 V and a continuous collector current (Ic) capability of 700 mA. It features a transition frequency of 50 MHz and a maximum power dissipation of 800 mW. The DC current gain (hFE) is a minimum of 40 at 50 mA and 2 V. Saturation voltage (Vce Sat) is a maximum of 400 mV at 50 mA and 500 mA. The device is housed in a TO-92-3 (TO-226AA) through-hole package and is supplied in bulk packaging. The KSC10080BU is suitable for applications in consumer electronics and general-purpose amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
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