FJPF1943RTU
TRANS PNP 230V 15A TO220F-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor FJPF1943RTU is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector current (Ic) of 15 A and a collector-emitter breakdown voltage (Vce) of 230 V, making it suitable for power switching and amplification circuits. With a transition frequency of 30 MHz and a maximum power dissipation of 50 W, it offers efficient operation. The minimum DC current gain (hFE) is 55 at 1 A and 5 V. The transistor is packaged in a TO-220F-3 (Full Pack) configuration, designed for through-hole mounting. It exhibits a Vce(sat) of 3 V at 800 mA and 8 A. The operating temperature range is -50°C to 150°C (TJ). This device finds application in areas such as power supplies, audio amplifiers, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
| Power - Max | 50 W |
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