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FJP3307DH2TU

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FJP3307DH2TU

TRANS NPN 400V 8A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single Bipolar Transistors

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Fairchild Semiconductor's FJP3307DH2TU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a high collector-emitter breakdown voltage of 400V and a continuous collector current capability of 8A, with a maximum power dissipation of 80W. The FJP3307DH2TU is housed in a TO-220-3 through-hole package, facilitating ease of integration into various circuit designs. Key electrical characteristics include a minimum DC current gain (hFE) of 26 at 2A and 5V, and a Vce saturation of 3V at 2A drive current for 8A collector current. This transistor is suitable for power switching and amplification circuits found in industrial control systems and power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 2A, 8A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce26 @ 2A, 5V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max80 W

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