FJAF6810DTU
TRANS NPN 750V 10A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor FJAF6810DTU is an NPN bipolar junction transistor (BJT) designed for high voltage applications. This component features a 750V collector-emitter breakdown voltage and a continuous collector current capability of 10A. With a maximum power dissipation of 60W, the FJAF6810DTU is suitable for demanding power switching and amplification circuits. Its TO-3PF package facilitates efficient heat dissipation and robust mounting in through-hole configurations. The transistor exhibits a minimum DC current gain (hFE) of 5 at 6A collector current and 5V collector-emitter voltage. Maximum collector-emitter saturation voltage is specified at 3V under 1.5A base current and 6A collector current conditions. This device is commonly employed in industrial power supplies, lighting control, and general-purpose high-voltage switching applications.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 1.5A, 6A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 6A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 750 V |
| Power - Max | 60 W |
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