BC849CMTF
TRANS NPN 30V 0.1A SOT23-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor's BC849CMTF is an NPN bipolar junction transistor (BJT) designed for surface mount applications in a SOT-23-3 package. This component offers a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. The transition frequency is specified at 300MHz, with a maximum power dissipation of 310mW. Key electrical characteristics include a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 600mV at 5mA base current and 100mA collector current. The collector cutoff current (ICBO) is a maximum of 15nA. This device is suitable for use in a wide range of applications, including general-purpose amplification and switching circuits across various industrial and consumer electronics sectors. The operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 310 mW |
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