2N5086BU
TRANS PNP 50V 0.1A TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor's 2N5086BU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. The minimum DC current gain (hFE) is specified at 150 when operating at 100µA collector current and 5V collector-emitter voltage. With a transition frequency (fT) of 40MHz, it is suitable for moderate frequency circuits. The transistor offers a maximum power dissipation of 625mW and a low collector cutoff current (Icbo) of 50nA. The Vce(sat) is 300mV at 1mA base current and 10mA collector current. Packaged in a TO-92-3 through-hole configuration, the 2N5086BU is commonly utilized in consumer electronics, industrial control, and various analog signal processing circuits. It operates reliably across a wide temperature range from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100µA, 5V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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