2N4400TFR
TRANS NPN 40V 0.6A TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single Bipolar Transistors
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Fairchild Semiconductor's 2N4400TFR is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 40V and a continuous collector current (Ic) capability of up to 600mA. With a maximum power dissipation of 625mW and a minimum DC current gain (hFE) of 50 at 150mA and 1V, the 2N4400TFR offers reliable performance in a variety of electronic systems. It is supplied in a TO-92-3 through-hole package, facilitating ease of assembly onto printed circuit boards. Operating across a temperature range of -55°C to 150°C, this transistor is suitable for use in industrial control, consumer electronics, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 150mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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