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HGT1N30N60A4D

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HGT1N30N60A4D

IGBT, 96A, 600V, N-CHANNEL

Manufacturer: Fairchild Semiconductor

Categories: IGBT Modules

Quality Control: Learn More

Fairchild Semiconductor HGT1N30N60A4D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-voltage, high-current applications. This component features a collector current rating of 96 A and a collector-emitter breakdown voltage of 600 V. The module offers a maximum power dissipation of 255 W and a low on-state voltage of 2.7 V at 15 V gate-emitter voltage and 30 A collector current. The HGT1N30N60A4D is packaged in a SOT-227B (miniBLOC) chassis mount configuration, facilitating efficient thermal management. Its operating temperature range spans from -55°C to 150°C (TJ). This IGBT module is suitable for demanding power electronics applications across various industries, including industrial motor control, power factor correction, and uninterruptible power supplies (UPS).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
NTC ThermistorNo
Supplier Device PackageSOT-227B
IGBT Type-
Current - Collector (Ic) (Max)96 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max255 W
Current - Collector Cutoff (Max)250 µA

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