HGT1N30N60A4D
IGBT, 96A, 600V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: IGBT Modules
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Fairchild Semiconductor HGT1N30N60A4D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-voltage, high-current applications. This component features a collector current rating of 96 A and a collector-emitter breakdown voltage of 600 V. The module offers a maximum power dissipation of 255 W and a low on-state voltage of 2.7 V at 15 V gate-emitter voltage and 30 A collector current.
The HGT1N30N60A4D is packaged in a SOT-227B (miniBLOC) chassis mount configuration, facilitating efficient thermal management. Its operating temperature range spans from -55°C to 150°C (TJ). This IGBT module is suitable for demanding power electronics applications across various industries, including industrial motor control, power factor correction, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227B |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 96 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 255 W |
| Current - Collector Cutoff (Max) | 250 µA |
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