FP7G75US60
IGBTManufacturer: Fairchild Semiconductor
Categories: IGBT Modules
Quality Control: Learn More
Fairchild Semiconductor's FP7G75US60 is a Power-SPM™ series IGBT module featuring a half-bridge configuration. This component is rated for 600 V collector-emitter breakdown voltage and a continuous collector current of 75 A. With a maximum power dissipation of 310 W, it is designed for chassis mounting. The module exhibits a Vce(on) of 2.8V at 15V Vge and 75A Ic, and an input capacitance (Cies) of 4.515 nF at 30V. Operating within a temperature range of -40°C to 125°C (TJ), this IGBT module is suitable for applications in industrial motor drives and power factor correction. The EPM7 package provides a robust solution for demanding power systems.
Additional Information
Series: Power-SPM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | EPM7 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | EPM7 |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 310 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 4.515 nF @ 30 V |
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