FMM7G20US60N
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Fairchild Semiconductor
Categories: IGBT Modules
Quality Control: Learn More
Fairchild Semiconductor FMM7G20US60N is a robust IGBT Module featuring a three-phase inverter with brake configuration. This component is rated for a 600 V collector-emitter breakdown voltage and a maximum collector current of 20 A. It offers a low on-state voltage of 2.7V at 15V gate-emitter voltage and 20A collector current, with a maximum power dissipation of 89 W. The module incorporates an NTC thermistor for thermal management and is designed for through-hole mounting. Typical applications for this device include industrial motor drives, power supplies, and renewable energy systems. The operating temperature range is from -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Through Hole |
| Input | Three Phase Bridge Rectifier |
| Configuration | Three Phase Inverter with Brake |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| NTC Thermistor | Yes |
| Supplier Device Package | - |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 89 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 1.277 nF @ 30 V |
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