FMG1G75US60H
IGBT, 75A, 600V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: IGBT Modules
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Fairchild Semiconductor FMG1G75US60H is a single N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This component features a maximum collector current of 75 A and a collector-emitter breakdown voltage of 600 V. The on-state voltage (Vce(on)) is specified at 2.8 V at 15 V gate-emitter voltage and 75 A collector current. With a maximum power dissipation of 310 W and an input capacitance (Cies) of 7.056 nF at 30 V, it is suitable for demanding switching operations. The module offers a wide operating temperature range from -40°C to 150°C (TJ) and utilizes a chassis mount for efficient thermal management. The 7PM-GA package is supplied in bulk. This IGBT module finds application in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 7PM-GA |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | 7PM-GA |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 310 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 7.056 nF @ 30 V |
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