FMG1G50US60H
IGBT, 50A, 600V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: IGBT Modules
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Fairchild Semiconductor FMG1G50US60H is a high-performance single N-channel Insulated Gate Bipolar Transistor (IGBT) module. This component features a 600V collector-emitter breakdown voltage and a maximum collector current of 50A, with a low on-state voltage of 2.8V at 15V gate-emitter voltage and 50A. Designed for demanding applications, it offers a maximum power dissipation of 250W and an operating temperature range of -40°C to 150°C. The module utilizes a Chassis Mount configuration with the 7PM-GA package, suitable for efficient thermal management. Applications include motor drives, industrial power supplies, and welding equipment. The input capacitance (Cies) is 3.46 nF at 30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 7PM-GA |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | 7PM-GA |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 250 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 3.46 nF @ 30 V |
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