NDS8947
MOSFET 2P-CH 30V 4A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor NDS8947, a dual P-channel MOSFET array, offers a 30V drain-source voltage and a continuous drain current capability of 4A per channel at 25°C. This component features logic level gate operation and a maximum power dissipation of 900mW. With a low on-resistance of 65mOhm at 4A and 10V, it is suitable for applications requiring efficient switching. The NDS8947 is housed in an 8-SOIC package for surface mounting, facilitating compact board designs. Key parameters include a gate charge of 30nC (max) at 10V and input capacitance of 690pF (max) at 15V. This MOSFET array is designed for operation across a wide temperature range of -55°C to 150°C. It finds application in various industries, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 15V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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