NDS8936
MOSFET 2N-CH 30V 5.3A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor NDS8936 is a dual N-channel MOSFET array designed for high-efficiency switching applications. This 30V device features a continuous drain current capability of 5.3A and a low on-resistance of 35mOhm at 5.3A, 10V. The NDS8936 incorporates logic-level gate drive, simplifying interface requirements with low-voltage control signals. Key parameters include a Ciss of 720pF at 15V and a Qg of 30nC at 10V, facilitating efficient switching. With a maximum power dissipation of 900mW, this MOSFET array is housed in an 8-SOIC package suitable for surface mounting. It is commonly utilized in power management, automotive systems, and industrial control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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