NDS8934
MOSFET 2P-CH 20V 3.8A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor NDS8934 is a dual P-channel MOSFET array designed for efficient power management. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.8A at 25°C. The NDS8934 boasts a low on-resistance (Rds On) of 70mOhm maximum at 3.8A and 4.5V Vgs, coupled with a logic-level gate for compatibility with lower voltage control signals. Its 900mW maximum power dissipation and 1120pF input capacitance (Ciss) make it suitable for applications requiring compact power switching. The 8-SOIC package facilitates surface mounting for streamlined board assembly in automotive, industrial, and consumer electronics sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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