NDS8858H
MOSFET N/P-CH 30V 6.3A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor NDS8858H is a MOSFET array featuring complementary N-channel and P-channel transistors. This component offers a Drain-to-Source Voltage (Vdss) of 30V with continuous drain currents of 6.3A for the N-channel and 4.8A for the P-channel, both rated at 25°C. The device boasts a low on-resistance (Rds On) of 35mOhm maximum at 4.8A and 10V gate-source voltage. Designed with a logic level gate, it has a gate charge (Qg) of 30nC maximum at 10V and input capacitance (Ciss) of 720pF maximum at 15V. The NDS8858H is housed in an 8-SOIC package suitable for surface mounting and supports a maximum power dissipation of 1W. Its operating temperature range is from -55°C to 150°C (TJ). This MOSFET array is utilized in applications such as power management and motor control within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A, 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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