NDM3000
MOSFET 3N/3P-CH 30V 3A 16SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Fairchild Semiconductor NDM3000 MOSFET array featuring six discrete MOSFETs in a 16-SOIC package. This device offers a 30V drain-to-source voltage and a continuous drain current of 3A at 25°C. The configuration includes three N-channel and three P-channel MOSFETs, suitable for 3-phase bridge applications. Key parameters include a low Rds(On) of 90mOhm at 3A, 10V, and a logic-level gate for simplified drive requirements. Maximum power dissipation is 1.4W. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management solutions and motor control applications within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 16-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 3 N and 3 P-Channel (3-Phase Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 10V, 360pF @ 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 16-SOIC |
Request a Quote
Clients Also Buy
FDW2503NZ
MOSFET 2N-CH 20V 5.5A 8TSSOP
FDPF9N50NZ-FS
MOSFET N-CH 500V
FDM3300NZ
MOSFET 2N-CH 20V 10A POWER33
