NDH8304P
MOSFET 2P-CH 20V 2.7A SUPERSOT-8Manufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor NDH8304P, a 2 P-Channel MOSFET array, is designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.7A at 25°C. The NDH8304P offers a low on-resistance of 70mOhm maximum at 2.7A and 4.5V Vgs, coupled with a logic level gate for enhanced compatibility with lower voltage control signals. With a gate charge (Qg) of 23nC maximum at 4.5V and input capacitance (Ciss) of 865pF maximum at 10V Vds, this MOSFET array is well-suited for power management in consumer electronics and industrial automation. The SuperSOT™-8 package provides excellent thermal performance with a maximum power dissipation of 800mW. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 865pF @ 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
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