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FDZ2554PZ

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FDZ2554PZ

MOSFET 2P-CH 20V 6.5A 18BGA

Manufacturer: Fairchild Semiconductor

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Fairchild Semiconductor's FDZ2554PZ is a PowerTrench® series dual P-channel MOSFET array designed for high-efficiency power management applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 6.5A at 25°C. The device boasts a low on-resistance (Rds On) of 28mOhm at 6.5A and 4.5V, crucial for minimizing conduction losses. Its logic-level gate drive ensures compatibility with lower voltage control signals. With a maximum power dissipation of 2.1W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for demanding environments. The FDZ2554PZ is housed in an 18-BGA (2.5x4) surface-mount package, ideal for space-constrained designs in industries such as consumer electronics and industrial automation. Key parameters include a maximum gate charge (Qg) of 21nC at 4.5V and a maximum input capacitance (Ciss) of 1430pF at 10V.

Additional Information

Series: PowerTrench®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case18-WFBGA
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.1W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.5A
Input Capacitance (Ciss) (Max) @ Vds1430pF @ 10V
Rds On (Max) @ Id, Vgs28mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs21nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package18-BGA (2.5x4)

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