FDW2510NZ
MOSFET 2N-CH 20V 6.4A 8TSSOPManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor's FDW2510NZ is a dual N-channel MOSFET array from the PowerTrench® series. This component is designed for efficient power management with a Drain to Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 6.4A at 25°C. The device features a logic level gate for enhanced control and a low Rds(On) of 24mOhm at 6.4A and 4.5V Vgs. Key parameters include a maximum power dissipation of 1.1W and a gate charge (Qg) of 12nC at 4.5V. The FDW2510NZ is packaged in an 8-TSSOP (0.173", 4.40mm width) for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in consumer electronics and computing.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 6.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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