FDW2506P
MOSFET 2P-CH 20V 5.3A 8TSSOPManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor FDW2506P, a PowerTrench® MOSFET array, features two P-channel enhancement mode transistors in an 8-TSSOP package. With a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 5.3A at 25°C, this device offers a low on-resistance of 22mOhm at 5.3A and 4.5V Vgs. The logic-level gate capability, characterized by a Vgs(th) of 1.5V at 250µA and a Gate Charge (Qg) of 34nC at 4.5V, ensures efficient switching with lower drive voltages. The input capacitance (Ciss) is 1015pF at 10V Vds. This surface-mount component has a maximum power dissipation of 600mW and operates across a temperature range of -55°C to 150°C. It is commonly utilized in power management applications, battery charging circuits, and load switching within consumer electronics and industrial control systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 600mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 1015pF @ 10V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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