FDW2504P
MOSFET 2P-CH 20V 3.8A 8TSSOPManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor PowerTrench® FDW2504P is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.8A at 25°C. The FDW2504P offers low on-resistance (Rds On) of 43mOhm maximum at 3.8A and 4.5V Vgs, along with a logic level gate for compatibility with lower voltage drive signals. Key parameters include a gate charge (Qg) of 16nC maximum at 4.5V and an input capacitance (Ciss) of 1030pF maximum at 10V. Housed in an 8-TSSOP package, this MOSFET array is rated for a maximum power dissipation of 600mW and operates across a temperature range of -55°C to 150°C. It is suitable for use in various industries including consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 600mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 10V |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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