FDW2501N
MOSFET 2N-CH 20V 6A 8TSSOPManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor's FDW2501N is a dual N-channel PowerTrench® MOSFET array housed in an 8-TSSOP package. This device offers a 20V drain-source voltage and a continuous drain current capability of 6A at 25°C. Key performance parameters include a maximum on-resistance of 18mOhm at 6A and 4.5V, and a gate charge of 17nC maximum at 4.5V. The MOSFET features a logic-level gate and a maximum power dissipation of 600mW. Designed for surface mount applications, it operates across a temperature range of -55°C to 150°C. This component finds application in power management solutions within the automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 600mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 1290pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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