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FDS8947A

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FDS8947A

MOSFET 2P-CH 30V 4A 8SOIC

Manufacturer: Fairchild Semiconductor

Categories: FET, MOSFET Arrays

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Fairchild Semiconductor FDS8947A is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 4A at 25°C. Optimized for logic-level gate drive, the FDS8947A exhibits a low on-resistance of 52mOhm at 4A and 10V Vgs, with a maximum gate charge of 27nC at 10V. The device offers a maximum power dissipation of 900mW and is housed in an 8-SOIC package for surface mounting. Its operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in power management, battery charging circuits, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max900mW
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A
Input Capacitance (Ciss) (Max) @ Vds730pF @ 15V
Rds On (Max) @ Id, Vgs52mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC

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