FDS8947A
MOSFET 2P-CH 30V 4A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor FDS8947A is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 4A at 25°C. Optimized for logic-level gate drive, the FDS8947A exhibits a low on-resistance of 52mOhm at 4A and 10V Vgs, with a maximum gate charge of 27nC at 10V. The device offers a maximum power dissipation of 900mW and is housed in an 8-SOIC package for surface mounting. Its operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in power management, battery charging circuits, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 730pF @ 15V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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