FDS8934A
MOSFET 2P-CH 20V 4A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor FDS8934A is a dual P-channel MOSFET array designed for surface-mount applications. This component features a 20V drain-to-source breakdown voltage and a continuous drain current capability of 4A per channel at 25°C. The FDS8934A offers a low on-resistance of 55mOhms maximum at 4A and 4.5V Vgs, with a logic-level gate for enhanced compatibility with low-voltage drive signals. Key electrical characteristics include a maximum gate charge of 28nC at 5V and an input capacitance of 1130pF maximum at 10V Vds. The device is packaged in an 8-SOIC configuration, suitable for automated assembly. Operating temperature range is -55°C to 150°C. This MOSFET array is utilized in power management and switching applications across various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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