FDS6892AZ
MOSFET 2N-CH 20V 7.5A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Fairchild Semiconductor's FDS6892AZ is a PowerTrench® MOSFET array featuring two N-channel transistors. This device offers a 20V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 7.5A at 25°C. The MOSFETs incorporate a logic level gate feature and exhibit a low on-resistance (Rds On) of 18mOhm maximum at 7.5A and 4.5V gate-source voltage. With a maximum power dissipation of 900mW, the FDS6892AZ is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. Typical applications include power management and motor control circuits across various industrial and consumer electronics sectors. The device presents a maximum gate charge (Qg) of 17nC at 4.5V and an input capacitance (Ciss) of 1286pF maximum at 10V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1286pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
