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FDS4895C

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FDS4895C

MOSFET N/P-CH 40V 5.5A 8SOIC

Manufacturer: Fairchild Semiconductor

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Fairchild Semiconductor FDS4895C, a MOSFET array from the PowerTrench® series, offers complementary N-channel and P-channel configurations. This component is designed for demanding applications, featuring a drain-to-source voltage (Vdss) of 40V. The continuous drain current (Id) at 25°C is rated at 5.5A for the N-channel and 4.4A for the P-channel. The Rds On is a maximum of 39mOhm at 5.5A and 10V Vgs. With a maximum power dissipation of 900mW, this device is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting. Key electrical parameters include a gate charge (Qg) of 10nC at 10V and input capacitance (Ciss) of 410pF at 20V. The operating temperature range is -55°C to 150°C. This MOSFET array is suitable for use in power management and switching applications across various industries.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max900mW
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C5.5A, 4.4A
Input Capacitance (Ciss) (Max) @ Vds410pF @ 20V
Rds On (Max) @ Id, Vgs39mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device Package8-SOIC

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