FDS4895C
MOSFET N/P-CH 40V 5.5A 8SOICManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor FDS4895C, a MOSFET array from the PowerTrench® series, offers complementary N-channel and P-channel configurations. This component is designed for demanding applications, featuring a drain-to-source voltage (Vdss) of 40V. The continuous drain current (Id) at 25°C is rated at 5.5A for the N-channel and 4.4A for the P-channel. The Rds On is a maximum of 39mOhm at 5.5A and 10V Vgs. With a maximum power dissipation of 900mW, this device is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting. Key electrical parameters include a gate charge (Qg) of 10nC at 10V and input capacitance (Ciss) of 410pF at 20V. The operating temperature range is -55°C to 150°C. This MOSFET array is suitable for use in power management and switching applications across various industries.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A, 4.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 20V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 5.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | 8-SOIC |