FDR8702H
MOSFET N/P-CH 20V 3.6A SUPERSOTManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor PowerTrench® FDR8702H is an N-channel and P-channel MOSFET array designed for high-efficiency power management applications. This device features a 20V drain-source voltage rating and offers continuous drain currents of 3.6A for the N-channel and 2.6A for the P-channel. With a low on-resistance of 38mOhm at 3.6A and 4.5V Vgs, it minimizes conduction losses. The logic level gate ensures compatibility with a wider range of gate drive voltages. The SuperSOT™-8 package, an 8-TSOP variant, provides excellent thermal performance with a maximum power dissipation of 800mW. Typical applications include battery management, power distribution, and motor control in consumer electronics and industrial automation. Operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A, 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 10V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 3.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
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