FDR8508P
MOSFET 2P-CH 30V 3A SUPERSOT 8Manufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor PowerTrench® FDR8508P is a dual P-channel MOSFET array designed for efficient power switching. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. The low on-resistance of 52mOhm at 3A and 10V Vgs (FDR8508P) ensures minimal conduction losses. With a logic level gate, it is suitable for low-voltage control applications. The SuperSOT™-8 package, a variant of the 8-TSOP (0.130", 3.30mm Width), offers a compact footprint for space-constrained designs. Typical applications include battery management, load switching, and power distribution in consumer electronics and portable devices. The operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSOP (0.130"", 3.30mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 15V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-8 |
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