FDMS7606
MOSFET 2N-CH 30V 11.5A/12A PWR56Manufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Fairchild Semiconductor's FDMS7606 is a PowerTrench® MOSFET array featuring two N-channel transistors in an 8-PowerWDFN (Power56) package. This device offers a 30V Drain-to-Source voltage (Vdss) with continuous drain currents of 11.5A and 12A at 25°C. Optimized for efficiency, it boasts a low Rds On of 11.4mOhm at 11.5A and 10V. The logic level gate feature simplifies drive requirements. Key parameters include a maximum gate charge (Qg) of 22nC at 10V and input capacitance (Ciss) of 1400pF at 15V. This surface mount component dissipates a maximum of 1W. Applications include power management in computing, industrial, and consumer electronics. The device is supplied in bulk packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A, 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 11.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Power56 |
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