FDMS3616S
MOSFET 2N-CH 25V 16A/18A 8PQFNManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor's FDMS3616S is a PowerTrench® MOSFET array featuring two N-channel, asymmetrical devices. This 25V device offers continuous drain currents of 16A and 18A, with a low Rds(on) of 6.6mOhm at 16A and 10V. The logic-level gate drive simplifies interface requirements, and the component boasts a gate charge of 27nC at 10V. Input capacitance (Ciss) is a maximum of 1765pF at 13V. Packaged in an 8-PQFN (5x6) for surface mounting, this MOSFET array is suitable for applications requiring efficient power switching, such as power management in computing and consumer electronics. Its 1W maximum power dissipation is key for thermal management in compact designs.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A, 18A |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 13V |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
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