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FDMS3604AS

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FDMS3604AS

MOSFET 2N-CH 30V 13A/23A 8PQFN

Manufacturer: Fairchild Semiconductor

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Fairchild Semiconductor PowerTrench® FDMS3604AS is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This 30V device features asymmetrical trench technology for low Rds(on) and optimized switching performance. With a continuous drain current capability of 13A and 23A respectively for the two channels at 25°C, and a low Rds(on) of 8mOhm at 13A and 10V Vgs, it minimizes conduction losses. The logic level gate ensures compatibility with lower voltage controllers. Key parameters include a gate charge (Qg) of 29nC (max) at 10V and input capacitance (Ciss) of 1695pF (max) at 15V Vds. Packaged in an 8-PQFN (5x6) for surface mounting, this component is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 1W.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Asymmetrical
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A, 23A
Input Capacitance (Ciss) (Max) @ Vds1695pF @ 15V
Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device Package8-PQFN (5x6)

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