FDMS3604AS
MOSFET 2N-CH 30V 13A/23A 8PQFNManufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor PowerTrench® FDMS3604AS is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This 30V device features asymmetrical trench technology for low Rds(on) and optimized switching performance. With a continuous drain current capability of 13A and 23A respectively for the two channels at 25°C, and a low Rds(on) of 8mOhm at 13A and 10V Vgs, it minimizes conduction losses. The logic level gate ensures compatibility with lower voltage controllers. Key parameters include a gate charge (Qg) of 29nC (max) at 10V and input capacitance (Ciss) of 1695pF (max) at 15V Vds. Packaged in an 8-PQFN (5x6) for surface mounting, this component is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 1W.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 23A |
| Input Capacitance (Ciss) (Max) @ Vds | 1695pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
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