FDMJ1023PZ
MOSFET 2P-CH 20V 2.9A SC75Manufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor's PowerTrench® FDMJ1023PZ is a dual P-channel MOSFET array designed for high-density power management applications. This 20V device features a continuous drain current of 2.9A and a maximum power dissipation of 700mW. The FDMJ1023PZ utilizes MOSFET technology and offers a low Rds(on) of 112mOhm at 2.9A and 4.5V Vgs. Its logic-level gate capability simplifies drive requirements. The SC-75, MicroFET package, specifically a 6-WFDFN with an exposed pad, is ideal for surface mount configurations. Key electrical parameters include a gate charge of 6.5nC (max) at 4.5V Vgs and an input capacitance of 400pF (max) at 10V Vds. This component operates within an industrial temperature range of -55°C to 150°C. It finds application in areas such as portable electronics and power switching.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-75, MicroFET |
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