FDM3300NZ
MOSFET 2N-CH 20V 10A POWER33Manufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Fairchild Semiconductor's FDM3300NZ is a PowerTrench® MOSFET featuring a dual N-channel configuration. This component offers a 20V Drain to Source Voltage (Vdss) and a continuous Drain current (Id) of 10A at 25°C. The device is designed with a Logic Level Gate and exhibits a low Rds On of 23mOhm maximum at 10A and 4.5V Vgs. Key electrical characteristics include a Gate Charge Qg of 17nC at 4.5V and an input capacitance Ciss of 1610pF at 10V. The FDM3300NZ is packaged in an 8-PowerVDFN (Power33) for surface mounting and has a maximum power dissipation of 900mW. It operates across a wide temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management and general-purpose switching found in consumer electronics and industrial systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 1610pF @ 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | Power33 |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
