FD6M045N06
MOSFET 2N-CH 60V 60A EPM15Manufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Fairchild Semiconductor's Power-SPM™ FD6M045N06 is a dual N-channel MOSFET array designed for high-power applications. This through-hole component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 60A at 25°C. The low on-resistance (Rds On) of 4.5mOhm at 40A and 10V, combined with a gate charge (Qg) of 87nC at 10V, ensures efficient switching performance. Input capacitance (Ciss) is rated at a maximum of 3890pF at 25V. The MOSFET operates within an industrial temperature range of -40°C to 150°C (TJ) and is supplied in the EPM15 package. This component is suitable for use in power supplies, motor control, and industrial automation systems.
Additional Information
Series: Power-SPM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | EPM15 |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Input Capacitance (Ciss) (Max) @ Vds | 3890pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 40A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | EPM15 |
Request a Quote
Clients Also Buy
FD6M033N06
MOSFET 2N-CH 60V 73A EPM15
FP7G50US60
IGBT
FD6M016N03
MOSFET 2N-CH 30V 80A EPM15
