FD6M043N08
MOSFET 2N-CH 75V 65A EPM15Manufacturer: Fairchild Semiconductor
Categories: FET, MOSFET Arrays
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Fairchild Semiconductor's FD6M043N08 is a dual N-channel Power-SPM™ MOSFET array designed for high-performance applications. This component features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 65A at 25°C. The Rds(on) is specified at a maximum of 4.3mOhm at 40A and 10V, indicating low conduction losses. With a gate charge (Qg) of 148nC (max) at 10V and input capacitance (Ciss) of 6180pF (max) at 25V, it offers efficient switching characteristics. The MOSFET array is housed in an EPM15 through-hole package, suitable for robust assembly. Operating across a temperature range of -40°C to 150°C (TJ), this device finds application in power supply units and motor control systems.
Additional Information
Series: Power-SPM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | EPM15 |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 65A |
| Input Capacitance (Ciss) (Max) @ Vds | 6180pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 40A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 148nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | EPM15 |
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